IKP20N65F5
Infineon Technologies
Infineon Technologies
IKP20N65 - DISCRETE IGBT WITH AN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IKP20N65F5 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKP20N65F5 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKP20N65F5 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 42 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 125 W
- Switching Energy: 160µJ (on), 60µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 20ns/165ns
- Test Condition: 400V, 10A, 32Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
Related Products
Infineon Technologies
IRG4PF50WPBF
Infineon Technologies
IRGP4263DPBF
Infineon Technologies
IRGS6B60KDTRRP
IXYS
IXGK60N60C2D1
Infineon Technologies
IRGI4060DPBF
IXYS
IXGK60N60
SemiQ
GPA060A060MN-FD
Infineon Technologies
IRGP4630DPBF
IXYS
IXGH64N60A3
Infineon Technologies