IRG4PF50WPBF
Infineon Technologies
Infineon Technologies
IGBT 900V 51A 200W TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$6.79000
25+
$5.84800
100+
$5.07770
500+
$4.42160
1,000+
$3.85106
Exquisite packaging
Discount
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Optimize your power systems with the IRG4PF50WPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRG4PF50WPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 51 A
- Current - Collector Pulsed (Icm): 204 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
- Power - Max: 200 W
- Switching Energy: 190µJ (on), 1.06mJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 29ns/110ns
- Test Condition: 720V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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