IKP40N65H5
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
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The IKP40N65H5 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKP40N65H5 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKP40N65H5 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 390µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 22ns/165ns
- Test Condition: 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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