IKW30N65NL5
Infineon Technologies
Infineon Technologies
IKW30N65 - DISCRETE IGBT WITH AN
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Upgrade your power management systems with the IKW30N65NL5 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKW30N65NL5 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKW30N65NL5 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
- Power - Max: 227 W
- Switching Energy: 560µJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 59ns/283ns
- Test Condition: 400V, 30A, 23Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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