IKW50N65H5AXKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
$0.00
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Reference Price (USD)
240+
$5.99575
Exquisite packaging
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The IKW50N65H5AXKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKW50N65H5AXKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKW50N65H5AXKSA1 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 450µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 116 nC
- Td (on/off) @ 25°C: 21ns/173ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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