IMBG120R350M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 4.7A TO263
$9.71
Available to order
Reference Price (USD)
1+
$9.71000
500+
$9.6129
1000+
$9.5158
1500+
$9.4187
2000+
$9.3216
2500+
$9.2245
Exquisite packaging
Discount
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The IMBG120R350M1HXTMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IMBG120R350M1HXTMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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