IMD2AT108
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.3W SMT6
$0.39
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09350
15,000+
$0.08525
30,000+
$0.07975
75,000+
$0.07700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Rohm Semiconductor's IMD2AT108, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Rohm Semiconductor's dedication to excellence ensures that the IMD2AT108 meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
Related Products
Rohm Semiconductor
FMA1AT148
onsemi
NSVMUN5133DW1T1G
Rohm Semiconductor
UMA2NTR
onsemi
NSVMUN5316DW1T1G
Rohm Semiconductor
EMH10T2R
Diodes Incorporated
DCX115EK-7-F
onsemi
MUN5235DW1T1
Toshiba Semiconductor and Storage
RN1706JE(TE85L,F)
onsemi
NSVMUN5213DW1T3G
Nexperia USA Inc.