IMW120R045M1XKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 52A TO247-3
$23.72
Available to order
Reference Price (USD)
1+
$23.72000
500+
$23.4828
1000+
$23.2456
1500+
$23.0084
2000+
$22.7712
2500+
$22.534
Exquisite packaging
Discount
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Upgrade your designs with the IMW120R045M1XKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IMW120R045M1XKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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