IMZA65R030M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$24.03
Available to order
Reference Price (USD)
1+
$24.03000
500+
$23.7897
1000+
$23.5494
1500+
$23.3091
2000+
$23.0688
2500+
$22.8285
Exquisite packaging
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Discover the IMZA65R030M1HXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IMZA65R030M1HXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 197W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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