IMW120R007M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$104.45
Available to order
Reference Price (USD)
1+
$104.45000
500+
$103.4055
1000+
$102.361
1500+
$101.3165
2000+
$100.272
2500+
$99.2275
Exquisite packaging
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Optimize your power electronics with the IMW120R007M1HXKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IMW120R007M1HXKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 47mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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