SI3499DV-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 1.5-V (G-S) MOSFET
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
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The SI3499DV-T1-BE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI3499DV-T1-BE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 750mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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