IPD088N06N3GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
$1.07
Available to order
Reference Price (USD)
2,500+
$0.44275
5,000+
$0.42061
12,500+
$0.40480
Exquisite packaging
Discount
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The IPD088N06N3GBTMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPD088N06N3GBTMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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