IPDQ60R010S7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$36.44
Available to order
Reference Price (USD)
1+
$36.44000
500+
$36.0756
1000+
$35.7112
1500+
$35.3468
2000+
$34.9824
2500+
$34.618
Exquisite packaging
Discount
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Meet the IPDQ60R010S7XTMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPDQ60R010S7XTMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
- Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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