IPDQ60R022S7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$15.74
Available to order
Reference Price (USD)
1+
$15.74360
500+
$15.586164
1000+
$15.428728
1500+
$15.271292
2000+
$15.113856
2500+
$14.95642
Exquisite packaging
Discount
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Upgrade your designs with the IPDQ60R022S7XTMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPDQ60R022S7XTMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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