IPN70R1K5CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 5.4A SOT223
$0.89
Available to order
Reference Price (USD)
3,000+
$0.27775
6,000+
$0.26063
15,000+
$0.25207
30,000+
$0.24740
Exquisite packaging
Discount
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Upgrade your designs with the IPN70R1K5CEATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPN70R1K5CEATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
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