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IPN70R450P7SATMA1

Infineon Technologies
IPN70R450P7SATMA1 Preview
Infineon Technologies
MOSFET N-CH 700V 10A SOT223
$1.15
Available to order
Reference Price (USD)
3,000+
$0.41180
6,000+
$0.38642
15,000+
$0.37373
30,000+
$0.36681
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 7.1W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA

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