IPP019N06NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TO220-3
$2.31
Available to order
Reference Price (USD)
1+
$2.31000
500+
$2.2869
1000+
$2.2638
1500+
$2.2407
2000+
$2.2176
2500+
$2.1945
Exquisite packaging
Discount
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The IPP019N06NF2SAKMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP019N06NF2SAKMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-220-3
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