NVMFS4C308NT1G
onsemi
onsemi
TRENCH 30V NCH
$0.69
Available to order
Reference Price (USD)
1+
$0.69300
500+
$0.68607
1000+
$0.67914
1500+
$0.67221
2000+
$0.66528
2500+
$0.65835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NVMFS4C308NT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVMFS4C308NT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
onsemi
NTMFS4C054NT1G
Renesas Electronics America Inc
RJK03K7DPA-00#J5A
Diodes Incorporated
DMT69M5LFVWQ-7
Micro Commercial Co
MCAC90N10Y-TP
Diodes Incorporated
DMN29M9UFDF-13
Diodes Incorporated
DMT10H009SCG-7
Infineon Technologies
IPTG210N25NM3FDATMA1
Infineon Technologies
IPA083N10NM5SXKSA1
onsemi
NTP15N06AV
onsemi