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IPP023N08N5AKSA1

Infineon Technologies
IPP023N08N5AKSA1 Preview
Infineon Technologies
MOSFET N-CH 80V 120A TO220-3
$5.35
Available to order
Reference Price (USD)
500+
$2.79086
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 208µA
  • Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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