IPP65R099CFD7AAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 24A TO220-3
$8.46
Available to order
Reference Price (USD)
1+
$8.46000
500+
$8.3754
1000+
$8.2908
1500+
$8.2062
2000+
$8.1216
2500+
$8.037
Exquisite packaging
Discount
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The IPP65R099CFD7AAKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP65R099CFD7AAKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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