IPT008N06NM5LFATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-8
$7.50
Available to order
Reference Price (USD)
1+
$7.50000
500+
$7.425
1000+
$7.35
1500+
$7.275
2000+
$7.2
2500+
$7.125
Exquisite packaging
Discount
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The IPT008N06NM5LFATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPT008N06NM5LFATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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