IPT039N15N5ATMA1
Infineon Technologies
Infineon Technologies
OPTIMOS 5 POWER MOSFET
$8.40
Available to order
Reference Price (USD)
1+
$8.40000
500+
$8.316
1000+
$8.232
1500+
$8.148
2000+
$8.064
2500+
$7.98
Exquisite packaging
Discount
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The IPT039N15N5ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPT039N15N5ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 257µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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