SCTWA90N65G2V
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
$39.30
Available to order
Reference Price (USD)
1+
$39.30000
500+
$38.907
1000+
$38.514
1500+
$38.121
2000+
$37.728
2500+
$37.335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SCTWA90N65G2V from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's SCTWA90N65G2V for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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