IPW60R024CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 77A TO247-3-41
$19.72
Available to order
Reference Price (USD)
1+
$19.72000
500+
$19.5228
1000+
$19.3256
1500+
$19.1284
2000+
$18.9312
2500+
$18.734
Exquisite packaging
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Optimize your power electronics with the IPW60R024CFD7XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPW60R024CFD7XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
- Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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