IPW65R041CFDFKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 68.5A TO247-3
$17.75
Available to order
Reference Price (USD)
240+
$10.33754
Exquisite packaging
Discount
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The IPW65R041CFDFKSA2 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPW65R041CFDFKSA2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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