IPW65R155CFD7XKSA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW
$6.16
Available to order
Reference Price (USD)
1+
$6.16000
500+
$6.0984
1000+
$6.0368
1500+
$5.9752
2000+
$5.9136
2500+
$5.852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW65R155CFD7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW65R155CFD7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJK03L3DNS-WS#J5
onsemi
NTMFS4C810NAT3G
Diodes Incorporated
DMP4015SPSQ-13
Toshiba Semiconductor and Storage
TK065Z65Z,S1F
Diodes Incorporated
DMT35M4LFDF4-7
UnitedSiC
UJ4C075023K3S
Infineon Technologies
IPB80P04P407ATMA2
Diodes Incorporated
DMP34M4SPS-13
Diodes Incorporated
DMTH6004LPS-13
onsemi