IPZ60R041P6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 77.5A TO247-4
$6.20
Available to order
Reference Price (USD)
1+
$6.20000
500+
$6.138
1000+
$6.076
1500+
$6.014
2000+
$5.952
2500+
$5.89
Exquisite packaging
Discount
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Enhance your electronic projects with the IPZ60R041P6FKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPZ60R041P6FKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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