IRF1010EPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 84A TO220AB
$1.67
Available to order
Reference Price (USD)
1+
$1.71000
10+
$1.52000
100+
$1.21870
500+
$0.96308
1,000+
$0.77722
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF1010EPBF by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
PSMN2R4-30MLDX
Infineon Technologies
IPW65R280E6FKSA1
Microchip Technology
APT22F120L
Vishay Siliconix
TP0610K-T1-GE3
Vishay Siliconix
SIB452DK-T1-GE3
NXP USA Inc.
BUK9E3R2-40E,127
Infineon Technologies
IPW65R075CFD7AXKSA1
STMicroelectronics
STW9NK90Z
Renesas Electronics America Inc
2SJ133-Z-E1-AZ
Vishay Siliconix