IRF3708PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 62A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$1.77000
10+
$1.56500
100+
$1.23650
500+
$0.95890
1,000+
$0.75702
Exquisite packaging
Discount
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Meet the IRF3708PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF3708PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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