IRFP451
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$3.60
Available to order
Reference Price (USD)
1+
$3.60000
500+
$3.564
1000+
$3.528
1500+
$3.492
2000+
$3.456
2500+
$3.42
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFP451 by Harris Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFP451 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Harris Corporation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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