MSCSM120DAM31CTBL1NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$125.80
Available to order
Reference Price (USD)
1+
$125.80000
500+
$124.542
1000+
$123.284
1500+
$122.026
2000+
$120.768
2500+
$119.51
Exquisite packaging
Discount
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The MSCSM120DAM31CTBL1NG from Microchip Technology sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Microchip Technology's MSCSM120DAM31CTBL1NG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: -
- Package / Case: Module
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