IRFR3711
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 100A DPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFR3711 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRFR3711 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
MTD5N25E
IXYS
IXFV20N80P
onsemi
NTLJD3182FZTBG
Renesas Electronics America Inc
HAT2168H-EL-E
Nexperia USA Inc.
BUK7907-55ATE,127
Infineon Technologies
IRL2203NSTRRPBF
Panasonic Electronic Components
FJ4B01100L1
Alpha & Omega Semiconductor Inc.
AON7450
Infineon Technologies
IRF3707SPBF
Infineon Technologies