IRFRC20TRPBF-BE3
Vishay Siliconix
        
                
                                Vishay Siliconix                            
                        
                                MOSFET N-CH 600V 2A DPAK                            
                        $1.35
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.35000
                                        500+
                                            $1.3365
                                        1000+
                                            $1.323
                                        1500+
                                            $1.3095
                                        2000+
                                            $1.296
                                        2500+
                                            $1.2825
                                        Exquisite packaging
                            Discount
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                    Optimize your power electronics with the IRFRC20TRPBF-BE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IRFRC20TRPBF-BE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600 V
 - Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252AA
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
