IXGH20N100
IXYS
IXYS
IGBT 1000V 40A 150W TO247
$0.00
Available to order
Reference Price (USD)
30+
$6.13467
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IXGH20N100 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGH20N100 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGH20N100 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 30ns/350ns
- Test Condition: 800V, 20A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
Related Products
Infineon Technologies
SKW15N60FKSA1
Infineon Technologies
IRG4BC20KD-S
IXYS
IXGT30N120BD1
Infineon Technologies
IRGSL30B60KPBF
Renesas Electronics America Inc
RJH60F6DPQ-A0#T0
Infineon Technologies
IRG7PH35UD1PBF
SemiQ
GPA030A120I-FD
IXYS
IXGP16N60B2D1
Fairchild Semiconductor
SGH20N120RUFDTU
Infineon Technologies