IXST30N60C
IXYS
IXYS
IGBT 600V 55A 200W TO268
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXST30N60C by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXST30N60C delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXST30N60C into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 200 W
- Switching Energy: 700µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 480V, 30A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
Related Products
IXYS
IXGH20N100
Infineon Technologies
SKW15N60FKSA1
Infineon Technologies
IRG4BC20KD-S
IXYS
IXGT30N120BD1
Infineon Technologies
IRGSL30B60KPBF
Renesas Electronics America Inc
RJH60F6DPQ-A0#T0
Infineon Technologies
IRG7PH35UD1PBF
SemiQ
GPA030A120I-FD
IXYS
IXGP16N60B2D1
Fairchild Semiconductor