IRGIB6B60KDPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 11A 38W TO220FP
$0.00
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Reference Price (USD)
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$3.12000
10+
$2.79800
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Upgrade your power management systems with the IRGIB6B60KDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGIB6B60KDPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGIB6B60KDPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 22 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
- Power - Max: 38 W
- Switching Energy: 110µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: 18.2 nC
- Td (on/off) @ 25°C: 25ns/215ns
- Test Condition: 400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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