IRG4RC10SDPBF
Infineon Technologies
Infineon Technologies
IGBT, 14A, 600V, N-CHANNEL, TO-2
$0.79
Available to order
Reference Price (USD)
1+
$0.79000
500+
$0.7821
1000+
$0.7742
1500+
$0.7663
2000+
$0.7584
2500+
$0.7505
Exquisite packaging
Discount
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Enhance your electronic projects with the IRG4RC10SDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRG4RC10SDPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRG4RC10SDPBF for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
- Power - Max: 38 W
- Switching Energy: 310µJ (on), 3.28mJ (off)
- Input Type: Standard
- Gate Charge: 15 nC
- Td (on/off) @ 25°C: 76ns/815ns
- Test Condition: 480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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