IXGH120N30B3
IXYS
IXYS
IGBT 300V 75A 540W TO247
$0.00
Available to order
Reference Price (USD)
30+
$5.81167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGH120N30B3 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXGH120N30B3 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXGH120N30B3 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 480 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
- Power - Max: 540 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
Related Products
Infineon Technologies
IRG4BC30KPBF
IXYS
IXGH25N100U1
STMicroelectronics
STGWA15S120DF3
Fairchild Semiconductor
SGH30N60RUFTU
Fairchild Semiconductor
SGS23N60UFDTU
Infineon Technologies
AUIRGP65A40D0
Infineon Technologies
IRG8P50N120KD-EPBF
IXYS
IXGK320N60A3
Renesas Electronics America Inc
RJH60F3DPQ-A0#T0
IXYS