IRG7PH50K10D-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 90A 400W TO247AD
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Upgrade your power management systems with the IRG7PH50K10D-EPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG7PH50K10D-EPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG7PH50K10D-EPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Power - Max: 400 W
- Switching Energy: 2.3mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 300 nC
- Td (on/off) @ 25°C: 90ns/340ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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