IRG7U150HF12B
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 300A POWIR 62
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Optimize your power systems with Infineon Technologies's IRG7U150HF12B, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The IRG7U150HF12B is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every IRG7U150HF12B module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 900 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 62 Module
- Supplier Device Package: POWIR® 62
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