IRG8P50N120KD-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 80A TO247AD
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Experience top-tier performance with the IRG8P50N120KD-EPBF Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IRG8P50N120KD-EPBF ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 350 W
- Switching Energy: 2.3mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 35ns/190ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 170 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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