IXGT40N60B2D1
IXYS
IXYS
IGBT 600V 75A 300W TO268
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXGT40N60B2D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGT40N60B2D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGT40N60B2D1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 400µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 18ns/130ns
- Test Condition: 400V, 30A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
Related Products
Infineon Technologies
IRG4PH20KPBF
Infineon Technologies
IRGPC40UD2
IXYS
IXSH45N120
Microchip Technology
APT35GP120B2DQ2G
Microsemi Corporation
APT20GF120BRG
Infineon Technologies
IRGBC30UD2
Microsemi Corporation
APT11GF120BRDQ1G
onsemi
NGTB50N65S1WG
Renesas Electronics America Inc
RJH60F6DPK-00#T0
IXYS