RJH60F3DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 40A 178.5W TO-247A
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Reference Price (USD)
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$4.41000
10+
$3.93800
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Upgrade your power management systems with the RJH60F3DPQ-A0#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RJH60F3DPQ-A0#T0 provides reliable and efficient operation. Renesas Electronics America Inc's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RJH60F3DPQ-A0#T0 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 20A
- Power - Max: 178.5 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 44ns/65ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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