IRGB4045DPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 12A 77W TO220AB
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Enhance your electronic projects with the IRGB4045DPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRGB4045DPBF ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRGB4045DPBF for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 77 W
- Switching Energy: 56µJ (on), 122µJ (off)
- Input Type: Standard
- Gate Charge: 13 nC
- Td (on/off) @ 25°C: 27ns/75ns
- Test Condition: 400V, 6A, 47Ohm, 15V
- Reverse Recovery Time (trr): 74 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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