IRGB5B120KDPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 12A 89W TO220AB
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Discover the IRGB5B120KDPBF Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRGB5B120KDPBF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRGB5B120KDPBF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A
- Power - Max: 89 W
- Switching Energy: 390µJ (on), 330µJ (off)
- Input Type: Standard
- Gate Charge: 25 nC
- Td (on/off) @ 25°C: 22ns/100ns
- Test Condition: 600V, 6A, 50Ohm, 15V
- Reverse Recovery Time (trr): 160 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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