IRGP20B120UD-EP
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 300W TO247AD
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Optimize your power systems with the IRGP20B120UD-EP Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRGP20B120UD-EP delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
- Power - Max: 300 W
- Switching Energy: 850µJ (on), 425µJ (off)
- Input Type: Standard
- Gate Charge: 169 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr): 300 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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