IKD10N60R
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 150W TO252-3
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Upgrade your power management systems with the IKD10N60R Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKD10N60R provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKD10N60R for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 590µJ
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 14ns/192ns
- Test Condition: 400V, 10A, 23Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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