IRGP30B120KD-EP
Infineon Technologies
Infineon Technologies
IGBT 1200V 60A 300W TO247AD
$0.00
Available to order
Reference Price (USD)
1+
$11.84000
25+
$10.19680
100+
$8.85380
500+
$7.70980
1,000+
$6.71498
Exquisite packaging
Discount
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Discover the IRGP30B120KD-EP Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRGP30B120KD-EP ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRGP30B120KD-EP for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
- Power - Max: 300 W
- Switching Energy: 1.07mJ (on), 1.49mJ (off)
- Input Type: Standard
- Gate Charge: 169 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr): 300 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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