IRGP4750DPBF
Infineon Technologies
Infineon Technologies
IGBT 650V TO-247
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The IRGP4750DPBF Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRGP4750DPBF ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRGP4750DPBF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 273 W
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 105 nC
- Td (on/off) @ 25°C: 50ns/105ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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