IXBX55N300
IXYS
IXYS
IGBT 3000V 130A 625W PLUS247
$0.00
Available to order
Reference Price (USD)
1+
$71.21000
10+
$66.89000
30+
$63.86933
120+
$60.41700
Exquisite packaging
Discount
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Optimize your power systems with the IXBX55N300 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXBX55N300 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000 V
- Current - Collector (Ic) (Max): 130 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
- Power - Max: 625 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 335 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.9 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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